AO6801E v ds i d (at v gs =-10v) -2a r ds(on) (at v gs =-10v) < 110m w r ds(on) (at v gs =-4.5v) < 135m w r ds(on) (at v gs =-2.5v) < 185m w typical esd protection hbm class 1c symbol the AO6801E combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. -30v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted s2 s1 g2 g1 d2 d1 top view 1 2 3 6 5 4 s1 g1 d1 s2 g2 d2 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl units parameter typ max c/w r q ja 150 180 maximum junction-to-ambient a maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 150 230 180 185 a i d -2.0 -1.6 -15 v 12 gate-source voltage drain-source voltage -30 v maximum units parameter t a =25c t a =70c continuous drain current pulsed drain current c c thermal characteristics power dissipation b p d t a =25c w 0.70 0.45 t a =70c junction and storage temperature range -55 to 150 30v dual p-channel mosfet general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.7 -1.05 -1.5 v i d(on) -15 a 90 110 t j =125c 129 158 105 135 m w 140 185 m w g fs 7 s v sd -0.78 -1 v i s -1 a c iss 305 pf c oss 42 pf c rss 26 pf r g 8.5 17 w q g (10v) 7 12 nc q g (4.5v) 3.5 6 nc q gs 0.7 nc q gd 1.2 nc t 6 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-2a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-2a v gs =-2.5v, i d =-1a forward transconductance diode forward voltage v gs =-4.5v, i d =-1.5a maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-2a gate source charge gate drain charge total gate charge t d(on) 6 ns t r 4 ns t d(off) 23 ns t f 7 ns t rr 9.5 ns q rr 13.5 nc body diode reverse recovery time body diode reverse recovery charge i f =-2a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =-2a, di/dt=500a/ m s turn-off fall time turn-on delaytime v gs =-10v, v ds =-15v, r l =7.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. AO6801E 30v dual p-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 60 80 100 120 140 160 180 200 0 2 4 6 8 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-1a v gs =-10v i d =-2a v gs =-4.5v i d =-1.5a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-2.0v -2.5v -6v -10v -4.5v v gs =-2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 60 80 100 120 140 160 180 200 220 240 260 0 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-2a 25 c 125 c AO6801E 30v dual p-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-2a 0.1 1 10 100 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =230 c/w AO6801E 30v dual p-channel mosfet www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i AO6801E 30v dual p-channel mosfet www.freescale.net.cn 5 / 5
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